- Manufacturer
- MFR.Part #
- IMDQ75R007M2HXTMA1
- JLCPCB Part #
- C47146880
- Package
- Q-DPAK
- Description
- -55℃~+175℃ 1 N-channel 171nC 222A 31pF 5.6V 5.922nF 502pF 750V 789W 8.5mΩ Half-Bridge N-Channel Q-DPAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | Q-DPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.922nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Configuration | Half-Bridge | |
| Gate Charge(Qg) | 171nC | |
| Current - Continuous Drain(Id) | 222A | |
| Reverse Transfer Capacitance (Crss) | 31pF | |
| Drain to Source Voltage | 750V | |
| Output Capacitance(Coss) | 502pF | |
| Pd - Power Dissipation | 789W | |
| RDS(on) | 8.5mΩ |
* Images are for reference only
IMDQ75R007M2HXTMA1
Extended- Manufacturer
- MFR.Part #
- IMDQ75R007M2HXTMA1
- JLCPCB Part #
- C47146880
- Package
- Q-DPAK
- Description
- -55℃~+175℃ 1 N-channel 171nC 222A 31pF 5.6V 5.922nF 502pF 750V 789W 8.5mΩ Half-Bridge N-Channel Q-DPAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- IMDQ75R007M2HXTMA1
- JLCPCB Part #
- C47146880
- Package
- Q-DPAK
- Description
- -55℃~+175℃ 1 N-channel 171nC 222A 31pF 5.6V 5.922nF 502pF 750V 789W 8.5mΩ Half-Bridge N-Channel Q-DPAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IMDQ75R007M2HXTMA1 Specifications
IMDQ75R007M2HXTMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | Q-DPAK | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.922nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Configuration | Half-Bridge | |
| Gate Charge(Qg) | 171nC | |
| Current - Continuous Drain(Id) | 222A | |
| Reverse Transfer Capacitance (Crss) | 31pF | |
| Drain to Source Voltage | 750V | |
| Output Capacitance(Coss) | 502pF | |
| Pd - Power Dissipation | 789W | |
| RDS(on) | 8.5mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IMDQ75R007M2HXTMA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IMDQ75R007M2HXTMA1 Schematic Symbol & PCB Footprint
The IMDQ75R007M2HXTMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.