


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | MagnaChip Semicon | |
| Package | TO-247 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 4.453nF | |
| Td(off) | 328ns、350ns | |
| Gate Charge(Qg) | 287nC@520V | |
| Switching Energy(Eoff) | 550uJ | |
| Reverse Transfer Capacitance (Cres) | 161pF | |
| Turn-On Energy (Eon) | 770uJ、1.05mJ | |
| Current - Collector Pulsed (Icm) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 80ns、116ns | |
| Current - Collector(Ic) | 50A、100A | |
| Vce Saturation(VCE(sat)) | 1.85V、2.2V | |
| Collector Cut-Off Current (Ices) | 40uA | |
| Pd - Power Dissipation | 188W、375W | |
| Output Capacitance(Coes) | 238pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 51ns、58ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
MBQ50T65FESCTH technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | MagnaChip Semicon | |
| Package | TO-247 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 4.453nF | |
| Td(off) | 328ns、350ns | |
| Gate Charge(Qg) | 287nC@520V | |
| Switching Energy(Eoff) | 550uJ | |
| Reverse Transfer Capacitance (Cres) | 161pF | |
| Turn-On Energy (Eon) | 770uJ、1.05mJ | |
| Current - Collector Pulsed (Icm) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 80ns、116ns | |
| Current - Collector(Ic) | 50A、100A | |
| Vce Saturation(VCE(sat)) | 1.85V、2.2V | |
| Collector Cut-Off Current (Ices) | 40uA | |
| Pd - Power Dissipation | 188W、375W | |
| Output Capacitance(Coes) | 238pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 51ns、58ns |
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The MBQ50T65FESCTH schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.