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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SCTWA35N65G2V
SCTWA35N65G2V - 1
SCTWA35N65G2V - 2
SCTWA35N65G2V - 3
Extended1/3
* Images are for reference only
SCTWA35N65G2V
Attributes
Value
Manufacturer
STMicroelectronics
MFR.Part #
SCTWA35N65G2V
JLCPCB Part #
C3281008
Package
TO-247
Description
-55℃~+200℃ 1.37nF 208W 45A 5V 650V 67mΩ 73nC N-Channel TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSTMicroelectronics
PackageTO-247
Operating Temperature-55℃~+200℃
TypeN-Channel
Ciss-Input Capacitance1.37nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5V
Gate Charge(Qg)73nC
Reverse Transfer Capacitance (Crss)30pF
Current - Continuous Drain(Id)45A
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Pd - Power Dissipation208W
RDS(on)67mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SCTWA35N65G2V
SCTWA35N65G2V

* Images are for reference only

SCTWA35N65G2V

Extended
Manufacturer

STMicroelectronics

MFR.Part #
SCTWA35N65G2V
JLCPCB Part #
C3281008
Package
TO-247
Description
-55℃~+200℃ 1.37nF 208W 45A 5V 650V 67mΩ 73nC N-Channel TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SCTWA35N65G2V

* Images are for reference only

SCTWA35N65G2V
Extended
Manufacturer

STMicroelectronics

MFR.Part #
SCTWA35N65G2V
JLCPCB Part #
C3281008
Package
TO-247
Description
-55℃~+200℃ 1.37nF 208W 45A 5V 650V 67mΩ 73nC N-Channel TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SCTWA35N65G2V Specifications

SCTWA35N65G2V technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSTMicroelectronics
PackageTO-247
Operating Temperature-55℃~+200℃
TypeN-Channel
Ciss-Input Capacitance1.37nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5V
Gate Charge(Qg)73nC
Reverse Transfer Capacitance (Crss)30pF
Current - Continuous Drain(Id)45A
Drain to Source Voltage650V
Output Capacitance(Coss)125pF
Pd - Power Dissipation208W
RDS(on)67mΩ
Results remaining: 0

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SCTWA35N65G2V Documents

SCTWA35N65G2V datasheets or manufacturer documentation.

Datasheet: SCTWA35N65G2V Datasheet (PDF)

SCTWA35N65G2V Schematic Symbol & PCB Footprint

The SCTWA35N65G2V schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.