
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-252AA | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 100ns、480ns | |
| Gate Charge(Qg) | 30nC | |
| Switching Energy(Eoff) | 800uJ、1.3mJ | |
| Current - Collector Pulsed (Icm) | 18A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 3.7V | |
| Pd - Power Dissipation | 66W | |
| Td(on) | 45ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTD8P50G1S technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-252AA | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 100ns、480ns | |
| Gate Charge(Qg) | 30nC | |
| Switching Energy(Eoff) | 800uJ、1.3mJ | |
| Current - Collector Pulsed (Icm) | 18A | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 3.7V | |
| Pd - Power Dissipation | 66W | |
| Td(on) | 45ns |
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HGTD8P50G1S datasheets or manufacturer documentation.
Datasheet: HGTD8P50G1S Datasheet (PDF)
The HGTD8P50G1S schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.