- Manufacturer
- MFR.Part #
- HGTD3N60B3S
- JLCPCB Part #
- C3193947
- Package
- TO-252-3(DPAK)
- Description
- -55℃~+150℃@(Tj) 105ns 18ns 21nC 33.3W 600V 7A TO-252-3(DPAK) IGBT Transistors / Modules
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-252-3(DPAK) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.4V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 105ns | |
| Switching Energy(Eoff) | 88uJ、210uJ | |
| Gate Charge(Qg) | 21nC | |
| Turn-On Energy (Eon) | 66uJ、130uJ | |
| Current - Collector Pulsed (Icm) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Current - Collector(Ic) | 7A | |
| Vce Saturation(VCE(sat)) | 1.8V、2.1V | |
| Pd - Power Dissipation | 33.3W | |
| Td(on) | 18ns |
* Images are for reference only
HGTD3N60B3S
Extended- Manufacturer
- MFR.Part #
- HGTD3N60B3S
- JLCPCB Part #
- C3193947
- Package
- TO-252-3(DPAK)
- Description
- -55℃~+150℃@(Tj) 105ns 18ns 21nC 33.3W 600V 7A TO-252-3(DPAK) IGBT Transistors / Modules
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- HGTD3N60B3S
- JLCPCB Part #
- C3193947
- Package
- TO-252-3(DPAK)
- Description
- -55℃~+150℃@(Tj) 105ns 18ns 21nC 33.3W 600V 7A TO-252-3(DPAK) IGBT Transistors / Modules
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTD3N60B3S Specifications
HGTD3N60B3S technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-252-3(DPAK) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.4V | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 105ns | |
| Switching Energy(Eoff) | 88uJ、210uJ | |
| Gate Charge(Qg) | 21nC | |
| Turn-On Energy (Eon) | 66uJ、130uJ | |
| Current - Collector Pulsed (Icm) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Current - Collector(Ic) | 7A | |
| Vce Saturation(VCE(sat)) | 1.8V、2.1V | |
| Pd - Power Dissipation | 33.3W | |
| Td(on) | 18ns |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the HGTD3N60B3S. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
HGTD3N60B3S Documents
HGTD3N60B3S datasheets or manufacturer documentation.
Datasheet: HGTD3N60B3S Datasheet (PDF)
HGTD3N60B3S Schematic Symbol & PCB Footprint
The HGTD3N60B3S schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.