


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | ROHM Semicon | |
| Package | TO-263 | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 780pF | |
| Td(off) | 64ns | |
| Gate Charge(Qg) | 32nC | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 55ns | |
| Current - Collector(Ic) | 30A | |
| Vce Saturation(VCE(sat)) | 2.1V@15A,15V | |
| Pd - Power Dissipation | 133W | |
| Output Capacitance(Coes) | 35pF | |
| Td(on) | 18ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
RGT30NS65DGTL technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | ROHM Semicon | |
| Package | TO-263 | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 780pF | |
| Td(off) | 64ns | |
| Gate Charge(Qg) | 32nC | |
| Reverse Transfer Capacitance (Cres) | 13pF | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 55ns | |
| Current - Collector(Ic) | 30A | |
| Vce Saturation(VCE(sat)) | 2.1V@15A,15V | |
| Pd - Power Dissipation | 133W | |
| Output Capacitance(Coes) | 35pF | |
| Td(on) | 18ns |
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RGT30NS65DGTL datasheets or manufacturer documentation.
Datasheet: RGT30NS65DGTL Datasheet (PDF)
The RGT30NS65DGTL schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.