- Manufacturer
- MFR.Part #
- SCT018W65G3-4AG
- JLCPCB Part #
- C25787784
- Package
- HiP247-4
- Description
- -55℃~+200℃ 180pF 2.077nF 20pF 27mΩ 398W 4.2V 55A 650V 77nC HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP247-4 | |
| Operating Temperature | -55℃~+200℃ | |
| Ciss-Input Capacitance | 2.077nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Gate Charge(Qg) | 77nC | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| Current - Continuous Drain(Id) | 55A | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 398W | |
| Output Capacitance(Coss) | 180pF | |
| RDS(on) | 27mΩ |
* Images are for reference only
SCT018W65G3-4AG
Extended- Manufacturer
- MFR.Part #
- SCT018W65G3-4AG
- JLCPCB Part #
- C25787784
- Package
- HiP247-4
- Description
- -55℃~+200℃ 180pF 2.077nF 20pF 27mΩ 398W 4.2V 55A 650V 77nC HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- SCT018W65G3-4AG
- JLCPCB Part #
- C25787784
- Package
- HiP247-4
- Description
- -55℃~+200℃ 180pF 2.077nF 20pF 27mΩ 398W 4.2V 55A 650V 77nC HiP247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SCT018W65G3-4AG Specifications
SCT018W65G3-4AG technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP247-4 | |
| Operating Temperature | -55℃~+200℃ | |
| Ciss-Input Capacitance | 2.077nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.2V | |
| Gate Charge(Qg) | 77nC | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| Current - Continuous Drain(Id) | 55A | |
| Drain to Source Voltage | 650V | |
| Pd - Power Dissipation | 398W | |
| Output Capacitance(Coss) | 180pF | |
| RDS(on) | 27mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the SCT018W65G3-4AG. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
SCT018W65G3-4AG Schematic Symbol & PCB Footprint
The SCT018W65G3-4AG schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.