- Manufacturer
- MFR.Part #
- IV2Q06025L1
- JLCPCB Part #
- C22368183
- Package
- TOLL
- Description
- -55℃~+175℃ 111A 125nC 19pF 251pF 3.09nF 33mΩ 4.5V 600W 650V TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | InventChip | |
| Package | TOLL | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 3.09nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Gate Charge(Qg) | 125nC | |
| Current - Continuous Drain(Id) | 111A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 251pF | |
| Pd - Power Dissipation | 600W | |
| RDS(on) | 33mΩ |
* Images are for reference only
IV2Q06025L1
Extended- Manufacturer
- MFR.Part #
- IV2Q06025L1
- JLCPCB Part #
- C22368183
- Package
- TOLL
- Description
- -55℃~+175℃ 111A 125nC 19pF 251pF 3.09nF 33mΩ 4.5V 600W 650V TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- IV2Q06025L1
- JLCPCB Part #
- C22368183
- Package
- TOLL
- Description
- -55℃~+175℃ 111A 125nC 19pF 251pF 3.09nF 33mΩ 4.5V 600W 650V TOLL Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IV2Q06025L1 Specifications
IV2Q06025L1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | InventChip | |
| Package | TOLL | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 3.09nF | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Gate Charge(Qg) | 125nC | |
| Current - Continuous Drain(Id) | 111A | |
| Reverse Transfer Capacitance (Crss) | 19pF | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 251pF | |
| Pd - Power Dissipation | 600W | |
| RDS(on) | 33mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IV2Q06025L1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IV2Q06025L1 Documents
IV2Q06025L1 datasheets or manufacturer documentation.
Datasheet: IV2Q06025L1 Datasheet (PDF)
IV2Q06025L1 Schematic Symbol & PCB Footprint
The IV2Q06025L1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.