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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NTH4L070N120M3S
NTH4L070N120M3S - 1
NTH4L070N120M3S - 2
NTH4L070N120M3S - 3
Extended1/3
* Images are for reference only
NTH4L070N120M3S
Attributes
Value
Manufacturer
onsemi
MFR.Part #
NTH4L070N120M3S
JLCPCB Part #
C19673850
Package
TO-247-4L
Description
-55℃~+175℃ 1.23nF 1.2kV 2.9V 34A 57nC 57pF 5pF 65mΩ@18V 80W N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Manufactureronsemi
PackageTO-247-4L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.23nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.9V
Gate Charge(Qg)57nC
Reverse Transfer Capacitance (Crss)5pF
Current - Continuous Drain(Id)34A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)57pF
Pd - Power Dissipation80W
RDS(on)65mΩ@18V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. NTH4L070N120M3S
NTH4L070N120M3S

* Images are for reference only

NTH4L070N120M3S

Extended
Manufacturer

onsemi

MFR.Part #
NTH4L070N120M3S
JLCPCB Part #
C19673850
Package
TO-247-4L
Description
-55℃~+175℃ 1.23nF 1.2kV 2.9V 34A 57nC 57pF 5pF 65mΩ@18V 80W N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NTH4L070N120M3S

* Images are for reference only

NTH4L070N120M3S
Extended
Manufacturer

onsemi

MFR.Part #
NTH4L070N120M3S
JLCPCB Part #
C19673850
Package
TO-247-4L
Description
-55℃~+175℃ 1.23nF 1.2kV 2.9V 34A 57nC 57pF 5pF 65mΩ@18V 80W N-Channel TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

NTH4L070N120M3S Specifications

NTH4L070N120M3S technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
Manufactureronsemi
PackageTO-247-4L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.23nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.9V
Gate Charge(Qg)57nC
Reverse Transfer Capacitance (Crss)5pF
Current - Continuous Drain(Id)34A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)57pF
Pd - Power Dissipation80W
RDS(on)65mΩ@18V
Results remaining: 0

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NTH4L070N120M3S Documents

NTH4L070N120M3S datasheets or manufacturer documentation.

Datasheet: NTH4L070N120M3S Datasheet (PDF)

NTH4L070N120M3S Schematic Symbol & PCB Footprint

The NTH4L070N120M3S schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.