- Manufacturer
- MFR.Part #
- SCT10N120
- JLCPCB Part #
- C191378
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.2kV 12A 150W 22nC 290pF 3.5V 30pF 690mΩ 9pF N-Channel HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP-247 | |
| Operating Temperature | -55℃~+200℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 290pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Gate Charge(Qg) | 22nC | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| Current - Continuous Drain(Id) | 12A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 150W | |
| RDS(on) | 690mΩ |
* Images are for reference only
SCT10N120
Extended- Manufacturer
- MFR.Part #
- SCT10N120
- JLCPCB Part #
- C191378
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.2kV 12A 150W 22nC 290pF 3.5V 30pF 690mΩ 9pF N-Channel HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- SCT10N120
- JLCPCB Part #
- C191378
- Package
- HiP-247
- Description
- -55℃~+200℃ 1.2kV 12A 150W 22nC 290pF 3.5V 30pF 690mΩ 9pF N-Channel HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SCT10N120 Specifications
SCT10N120 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | STMicroelectronics | |
| Package | HiP-247 | |
| Operating Temperature | -55℃~+200℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 290pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Gate Charge(Qg) | 22nC | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| Current - Continuous Drain(Id) | 12A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 150W | |
| RDS(on) | 690mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the SCT10N120. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
SCT10N120 Documents
SCT10N120 datasheets or manufacturer documentation.
Datasheet: SCT10N120 Datasheet (PDF)
SCT10N120 Schematic Symbol & PCB Footprint
The SCT10N120 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.