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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMZ120R030M1HXKSA1
IMZ120R030M1HXKSA1 - 1
IMZ120R030M1HXKSA1 - 2
IMZ120R030M1HXKSA1 - 3
Extended1/3
* Images are for reference only

IMZ120R030M1HXKSA1

Attributes
Value
Manufacturer
Infineon Technologies
MFR.Part #
IMZ120R030M1HXKSA1
JLCPCB Part #
C3289091
Package
TO-247-4
Description
-55℃~+175℃ 1.2kV 116pF 2.12nF 227W 30mΩ 5.7V 56A 63nC N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageTO-247-4
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.12nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.7V
Gate Charge(Qg)63nC
Reverse Transfer Capacitance (Crss)13pF
Current - Continuous Drain(Id)56A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)116pF
Pd - Power Dissipation227W
RDS(on)30mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMZ120R030M1HXKSA1
IMZ120R030M1HXKSA1

* Images are for reference only

IMZ120R030M1HXKSA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMZ120R030M1HXKSA1
JLCPCB Part #
C3289091
Package
TO-247-4
Description
-55℃~+175℃ 1.2kV 116pF 2.12nF 227W 30mΩ 5.7V 56A 63nC N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMZ120R030M1HXKSA1

* Images are for reference only

IMZ120R030M1HXKSA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMZ120R030M1HXKSA1
JLCPCB Part #
C3289091
Package
TO-247-4
Description
-55℃~+175℃ 1.2kV 116pF 2.12nF 227W 30mΩ 5.7V 56A 63nC N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMZ120R030M1HXKSA1 Specifications

IMZ120R030M1HXKSA1 technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageTO-247-4
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance2.12nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.7V
Gate Charge(Qg)63nC
Reverse Transfer Capacitance (Crss)13pF
Current - Continuous Drain(Id)56A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)116pF
Pd - Power Dissipation227W
RDS(on)30mΩ
Results remaining: 0

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IMZ120R030M1HXKSA1 Documents

IMZ120R030M1HXKSA1 datasheets or manufacturer documentation.

Datasheet: IMZ120R030M1HXKSA1 Datasheet (PDF)

IMZ120R030M1HXKSA1 Schematic Symbol & PCB Footprint

The IMZ120R030M1HXKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.