
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Input Capacitance(Ciss) | 8.41nF | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Gate Charge(Qg) | 117nC@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| Current - Continuous Drain(Id) | 160A | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.61nF | |
| Pd - Power Dissipation | 214W | |
| RDS(on) | 3.9mΩ@10V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IPB039N10N3GE8197ATMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Input Capacitance(Ciss) | 8.41nF | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Gate Charge(Qg) | 117nC@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| Current - Continuous Drain(Id) | 160A | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 1.61nF | |
| Pd - Power Dissipation | 214W | |
| RDS(on) | 3.9mΩ@10V |
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IPB039N10N3GE8197ATMA1 datasheets or manufacturer documentation.
Datasheet: IPB039N10N3GE8197ATMA1 Datasheet (PDF)
The IPB039N10N3GE8197ATMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.