DMWSH120H28SM4Q
- Manufacturer
- MFR.Part #
- DMWSH120H28SM4Q
- JLCPCB Part #
- C19950048
- Package
- TO-247-4
- Description
- -55℃~+175℃ 100A 173.7nC 180pF 28.5mΩ 3.6V 3.944nF 429W 9.73pF TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Diodes Incorporated | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 3.944nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 173.7nC | |
| Reverse Transfer Capacitance (Crss) | 9.73pF | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 429W | |
| RDS(on) | 28.5mΩ |
* Images are for reference only
DMWSH120H28SM4Q
Extended- Manufacturer
- MFR.Part #
- DMWSH120H28SM4Q
- JLCPCB Part #
- C19950048
- Package
- TO-247-4
- Description
- -55℃~+175℃ 100A 173.7nC 180pF 28.5mΩ 3.6V 3.944nF 429W 9.73pF TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
DMWSH120H28SM4Q
Extended- Manufacturer
- MFR.Part #
- DMWSH120H28SM4Q
- JLCPCB Part #
- C19950048
- Package
- TO-247-4
- Description
- -55℃~+175℃ 100A 173.7nC 180pF 28.5mΩ 3.6V 3.944nF 429W 9.73pF TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
DMWSH120H28SM4Q Specifications
DMWSH120H28SM4Q technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Diodes Incorporated | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 3.944nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 173.7nC | |
| Reverse Transfer Capacitance (Crss) | 9.73pF | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 180pF | |
| Pd - Power Dissipation | 429W | |
| RDS(on) | 28.5mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the DMWSH120H28SM4Q. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
DMWSH120H28SM4Q Documents
DMWSH120H28SM4Q datasheets or manufacturer documentation.
Datasheet: DMWSH120H28SM4Q Datasheet (PDF)
DMWSH120H28SM4Q Schematic Symbol & PCB Footprint
The DMWSH120H28SM4Q schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.