
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@3.7V,10A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Current - Collector(Ic) | 20A | |
| Pd - Power Dissipation | 165W | |
| Collector-Emitter Breakdown Voltage (Vces) | 365V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
NGB8207ABNT4G technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@3.7V,10A | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Current - Collector(Ic) | 20A | |
| Pd - Power Dissipation | 165W | |
| Collector-Emitter Breakdown Voltage (Vces) | 365V |
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NGB8207ABNT4G datasheets or manufacturer documentation.
Datasheet: NGB8207ABNT4G Datasheet (PDF)
The NGB8207ABNT4G schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.