
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | DPAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Td(off) | 4.8us | |
| Gate Charge(Qg) | 17nC | |
| Collector-Emitter Breakdown Voltage (Vces) | 400V | |
| Reverse Recovery Time(trr) | 2.1us | |
| Current - Collector(Ic) | 21A | |
| Vce Saturation(VCE(sat)) | 1.65V@6A,4V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Pd - Power Dissipation | 150W | |
| Td(on) | 4us |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
ISL9V3040D3STV technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | DPAK | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@1mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Td(off) | 4.8us | |
| Gate Charge(Qg) | 17nC | |
| Collector-Emitter Breakdown Voltage (Vces) | 400V | |
| Reverse Recovery Time(trr) | 2.1us | |
| Current - Collector(Ic) | 21A | |
| Vce Saturation(VCE(sat)) | 1.65V@6A,4V | |
| Collector Cut-Off Current (Ices) | 1mA | |
| Pd - Power Dissipation | 150W | |
| Td(on) | 4us |
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ISL9V3040D3STV datasheets or manufacturer documentation.
Datasheet: ISL9V3040D3STV Datasheet (PDF)
The ISL9V3040D3STV schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.