
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | TO-252AA | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Td(off) | 11.5ns | |
| Gate Charge(Qg) | 23nC | |
| Switching Energy(Eoff) | 600uJ | |
| Turn-On Energy (Eon) | 165uJ | |
| Current - Collector Pulsed (Icm) | 56A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Current - Collector(Ic) | 14A | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 8.5ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTD7N60C3S9A technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | TO-252AA | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Td(off) | 11.5ns | |
| Gate Charge(Qg) | 23nC | |
| Switching Energy(Eoff) | 600uJ | |
| Turn-On Energy (Eon) | 165uJ | |
| Current - Collector Pulsed (Icm) | 56A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Current - Collector(Ic) | 14A | |
| Vce Saturation(VCE(sat)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Td(on) | 8.5ns |
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HGTD7N60C3S9A datasheets or manufacturer documentation.
Datasheet: HGTD7N60C3S9A Datasheet (PDF)
The HGTD7N60C3S9A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.