
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK(TO-263) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,3A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Reverse Recovery Time(trr) | 29ns | |
| Td(off) | 73ns | |
| Gate Charge(Qg) | 21nC | |
| Current - Collector(Ic) | 17A | |
| Pd - Power Dissipation | 70W | |
| Turn-On Energy (Eon) | 37uJ | |
| Td(on) | 6ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGT1S3N60A4DS9A technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | onsemi | |
| Package | D2PAK(TO-263) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,3A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Reverse Recovery Time(trr) | 29ns | |
| Td(off) | 73ns | |
| Gate Charge(Qg) | 21nC | |
| Current - Collector(Ic) | 17A | |
| Pd - Power Dissipation | 70W | |
| Turn-On Energy (Eon) | 37uJ | |
| Td(on) | 6ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
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HGT1S3N60A4DS9A datasheets or manufacturer documentation.
Datasheet: HGT1S3N60A4DS9A Datasheet (PDF)
The HGT1S3N60A4DS9A schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.