
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-220 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Gate Charge(Qg) | 19nC | |
| Current - Collector(Ic) | 17.5A | |
| Pd - Power Dissipation | 75W | |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTP10N40C1D technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-220 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Gate Charge(Qg) | 19nC | |
| Current - Collector(Ic) | 17.5A | |
| Pd - Power Dissipation | 75W | |
| Collector-Emitter Breakdown Voltage (Vces) | 400V |
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HGTP10N40C1D datasheets or manufacturer documentation.
Datasheet: HGTP10N40C1D Datasheet (PDF)
The HGTP10N40C1D schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.