
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-247 | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Gate Charge(Qg) | 212nC | |
| Current - Collector(Ic) | 54A | |
| Pd - Power Dissipation | 208W | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HGTG27N60C3DR technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Texas Instruments | |
| Package | TO-247 | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Gate Charge(Qg) | 212nC | |
| Current - Collector(Ic) | 54A | |
| Pd - Power Dissipation | 208W | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
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HGTG27N60C3DR datasheets or manufacturer documentation.
Datasheet: HGTG27N60C3DR Datasheet (PDF)
The HGTG27N60C3DR schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.