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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. GC3M0015065K
GC3M0015065K - 1
GC3M0015065K - 2
GC3M0015065K - 3
GC3M0015065K - 4
Extended1/4
* Images are for reference only

GC3M0015065K

Attributes
Value
Manufacturer
SUPSiC
MFR.Part #
GC3M0015065K
JLCPCB Part #
C7435028
Package
TO-247-4
Description
-40℃~+175℃ 120A 15mΩ@15V 188nC 2.3V 289pF 31pF 416W 5.011nF 650V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSUPSiC
PackageTO-247-4
Operating Temperature-40℃~+175℃
TypeN-Channel
Ciss-Input Capacitance5.011nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.3V
Gate Charge(Qg)188nC
Reverse Transfer Capacitance (Crss)31pF
Current - Continuous Drain(Id)120A
Drain to Source Voltage650V
Output Capacitance(Coss)289pF
Pd - Power Dissipation416W
RDS(on)15mΩ@15V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. GC3M0015065K
GC3M0015065K

* Images are for reference only

GC3M0015065K

Extended
Manufacturer

SUPSiC

MFR.Part #
GC3M0015065K
JLCPCB Part #
C7435028
Package
TO-247-4
Description
-40℃~+175℃ 120A 15mΩ@15V 188nC 2.3V 289pF 31pF 416W 5.011nF 650V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

GC3M0015065K

* Images are for reference only

GC3M0015065K

Extended
Manufacturer

SUPSiC

MFR.Part #
GC3M0015065K
JLCPCB Part #
C7435028
Package
TO-247-4
Description
-40℃~+175℃ 120A 15mΩ@15V 188nC 2.3V 289pF 31pF 416W 5.011nF 650V N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

GC3M0015065K Specifications

GC3M0015065K technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSUPSiC
PackageTO-247-4
Operating Temperature-40℃~+175℃
TypeN-Channel
Ciss-Input Capacitance5.011nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.3V
Gate Charge(Qg)188nC
Reverse Transfer Capacitance (Crss)31pF
Current - Continuous Drain(Id)120A
Drain to Source Voltage650V
Output Capacitance(Coss)289pF
Pd - Power Dissipation416W
RDS(on)15mΩ@15V
Results remaining: 0

PCB Assembly Tips

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  • 1

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  • 2

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  • 3

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GC3M0015065K Documents

GC3M0015065K datasheets or manufacturer documentation.

Datasheet: GC3M0015065K Datasheet (PDF)

GC3M0015065K Schematic Symbol & PCB Footprint

The GC3M0015065K schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.