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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SG1M160120J
SG1M160120J - 1
SG1M160120J - 2
SG1M160120J - 3
Extended1/3
* Images are for reference only

SG1M160120J

Attributes
Value
Manufacturer
Sichainsemi
MFR.Part #
SG1M160120J
JLCPCB Part #
C22363612
Package
TO-263-7L
Description
-55℃~+175℃ 1.2kV 1.4pF 120W 160mΩ@15V 2.8V 21A 25.4nC 617pF N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSichainsemi
PackageTO-263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance617pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.8V
Gate Charge(Qg)25.4nC
Reverse Transfer Capacitance (Crss)1.4pF
Current - Continuous Drain(Id)21A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)31pF
Pd - Power Dissipation120W
RDS(on)160mΩ@15V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. SG1M160120J
SG1M160120J

* Images are for reference only

SG1M160120J

Extended
Manufacturer

Sichainsemi

MFR.Part #
SG1M160120J
JLCPCB Part #
C22363612
Package
TO-263-7L
Description
-55℃~+175℃ 1.2kV 1.4pF 120W 160mΩ@15V 2.8V 21A 25.4nC 617pF N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SG1M160120J

* Images are for reference only

SG1M160120J

Extended
Manufacturer

Sichainsemi

MFR.Part #
SG1M160120J
JLCPCB Part #
C22363612
Package
TO-263-7L
Description
-55℃~+175℃ 1.2kV 1.4pF 120W 160mΩ@15V 2.8V 21A 25.4nC 617pF N-Channel TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
Datasheet
Download
Source
JLCPCB
Assembly Type
SMT Assembly
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

SG1M160120J Specifications

SG1M160120J technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerSichainsemi
PackageTO-263-7L
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance617pF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.8V
Gate Charge(Qg)25.4nC
Reverse Transfer Capacitance (Crss)1.4pF
Current - Continuous Drain(Id)21A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)31pF
Pd - Power Dissipation120W
RDS(on)160mΩ@15V
Results remaining: 0

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SG1M160120J Documents

SG1M160120J datasheets or manufacturer documentation.

Datasheet: SG1M160120J Datasheet (PDF)

SG1M160120J Schematic Symbol & PCB Footprint

The SG1M160120J schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.