G3R75MT12K
- Manufacturer
- MFR.Part #
- G3R75MT12K
- JLCPCB Part #
- C22607376
- Package
- TO-247-4
- Description
- -55℃~+175℃ 1.053nF 1.2kV 123W 23A 4V 55nC 6.7pF 75pF 90mΩ N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Navitas | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.053nF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Gate Charge(Qg) | 55nC | |
| Reverse Transfer Capacitance (Crss) | 6.7pF | |
| Current - Continuous Drain(Id) | 23A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 123W | |
| RDS(on) | 90mΩ |
* Images are for reference only
G3R75MT12K
Extended- Manufacturer
- MFR.Part #
- G3R75MT12K
- JLCPCB Part #
- C22607376
- Package
- TO-247-4
- Description
- -55℃~+175℃ 1.053nF 1.2kV 123W 23A 4V 55nC 6.7pF 75pF 90mΩ N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
G3R75MT12K
Extended- Manufacturer
- MFR.Part #
- G3R75MT12K
- JLCPCB Part #
- C22607376
- Package
- TO-247-4
- Description
- -55℃~+175℃ 1.053nF 1.2kV 123W 23A 4V 55nC 6.7pF 75pF 90mΩ N-Channel TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
G3R75MT12K Specifications
G3R75MT12K technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Navitas | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.053nF | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Gate Charge(Qg) | 55nC | |
| Reverse Transfer Capacitance (Crss) | 6.7pF | |
| Current - Continuous Drain(Id) | 23A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 75pF | |
| Pd - Power Dissipation | 123W | |
| RDS(on) | 90mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the G3R75MT12K. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
G3R75MT12K Documents
G3R75MT12K datasheets or manufacturer documentation.
Datasheet: G3R75MT12K Datasheet (PDF)
G3R75MT12K Schematic Symbol & PCB Footprint
The G3R75MT12K schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.