IKW50N65EH5
- Manufacturer
- MFR.Part #
- IKW50N65EH5
- JLCPCB Part #
- C536218
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.5mJ 12pF 172ns 2.1V@50A,15V 200A 25ns 275W 3.2V@0.5mA 3nF 500uJ 650V 80A 81ns 90pF TO-247-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 3nF | |
| Td(off) | 172ns | |
| Gate Charge(Qg) | 120nC@520V | |
| Switching Energy(Eoff) | 500uJ | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Current - Collector Pulsed (Icm) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 81ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Pd - Power Dissipation | 275W | |
| Output Capacitance(Coes) | 90pF | |
| Td(on) | 25ns |
* Images are for reference only
IKW50N65EH5
Extended- Manufacturer
- MFR.Part #
- IKW50N65EH5
- JLCPCB Part #
- C536218
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.5mJ 12pF 172ns 2.1V@50A,15V 200A 25ns 275W 3.2V@0.5mA 3nF 500uJ 650V 80A 81ns 90pF TO-247-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
IKW50N65EH5
Extended- Manufacturer
- MFR.Part #
- IKW50N65EH5
- JLCPCB Part #
- C536218
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.5mJ 12pF 172ns 2.1V@50A,15V 200A 25ns 275W 3.2V@0.5mA 3nF 500uJ 650V 80A 81ns 90pF TO-247-3 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IKW50N65EH5 Specifications
IKW50N65EH5 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 3nF | |
| Td(off) | 172ns | |
| Gate Charge(Qg) | 120nC@520V | |
| Switching Energy(Eoff) | 500uJ | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Current - Collector Pulsed (Icm) | 200A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 81ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 2.1V@50A,15V | |
| Pd - Power Dissipation | 275W | |
| Output Capacitance(Coes) | 90pF | |
| Td(on) | 25ns |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IKW50N65EH5. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IKW50N65EH5 Documents
IKW50N65EH5 datasheets or manufacturer documentation.
Datasheet: IKW50N65EH5 Datasheet (PDF)
IKW50N65EH5 Schematic Symbol & PCB Footprint
The IKW50N65EH5 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.