
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HXY MOSFET | |
| Package | TO-220C | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 361pF | |
| Configuration | Standalone | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 17.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| Current - Continuous Drain(Id) | 20A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 165mΩ@18V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SPP24N60CFDHKSA1-HXY technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HXY MOSFET | |
| Package | TO-220C | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 361pF | |
| Configuration | Standalone | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 17.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| Current - Continuous Drain(Id) | 20A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 165mΩ@18V |
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The SPP24N60CFDHKSA1-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.