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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. HC2M0080120D
HC2M0080120D - 1
HC2M0080120D - 2
HC2M0080120D - 3
HC2M0080120D - 4
Extended1/4
* Images are for reference only

HC2M0080120D

Attributes
Value
Manufacturer
HXY MOSFET
MFR.Part #
HC2M0080120D
JLCPCB Part #
C19723850
Package
TO-247-3L
Description
-55℃~+150℃ 1.13nF 1.2kV 192W 36A 4V 7.5pF 71nC 92pF 98mΩ TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-247-3L
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance1.13nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
Gate Charge(Qg)71nC
Reverse Transfer Capacitance (Crss)7.5pF
Current - Continuous Drain(Id)36A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Pd - Power Dissipation192W
RDS(on)98mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. HC2M0080120D
HC2M0080120D

* Images are for reference only

HC2M0080120D

Extended
Manufacturer

HXY MOSFET

MFR.Part #
HC2M0080120D
JLCPCB Part #
C19723850
Package
TO-247-3L
Description
-55℃~+150℃ 1.13nF 1.2kV 192W 36A 4V 7.5pF 71nC 92pF 98mΩ TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

HC2M0080120D

* Images are for reference only

HC2M0080120D

Extended
Manufacturer

HXY MOSFET

MFR.Part #
HC2M0080120D
JLCPCB Part #
C19723850
Package
TO-247-3L
Description
-55℃~+150℃ 1.13nF 1.2kV 192W 36A 4V 7.5pF 71nC 92pF 98mΩ TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

HC2M0080120D Specifications

HC2M0080120D technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-247-3L
Operating Temperature-55℃~+150℃
TypeN-Channel
Ciss-Input Capacitance1.13nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))4V
Gate Charge(Qg)71nC
Reverse Transfer Capacitance (Crss)7.5pF
Current - Continuous Drain(Id)36A
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Pd - Power Dissipation192W
RDS(on)98mΩ
Results remaining: 0

PCB Assembly Tips

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  • 1

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  • 2

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HC2M0080120D Documents

HC2M0080120D datasheets or manufacturer documentation.

Datasheet: HC2M0080120D Datasheet (PDF)

HC2M0080120D Schematic Symbol & PCB Footprint

The HC2M0080120D schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.