HT63N1200AKZ
- Manufacturer
- MFR.Part #
- HT63N1200AKZ
- JLCPCB Part #
- C47326413
- Package
- TO-247-4L
- Description
- -40℃~+175℃ 1.2kV 118nC 129pF 3.357nF 3.6V 341W 43mΩ 63A 8pF TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HTCSEMI | |
| Package | TO-247-4L | |
| Operating Temperature | -40℃~+175℃ | |
| Ciss-Input Capacitance | 3.357nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 118nC | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| Current - Continuous Drain(Id) | 63A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 129pF | |
| Pd - Power Dissipation | 341W | |
| RDS(on) | 43mΩ |
* Images are for reference only
HT63N1200AKZ
Extended- Manufacturer
- MFR.Part #
- HT63N1200AKZ
- JLCPCB Part #
- C47326413
- Package
- TO-247-4L
- Description
- -40℃~+175℃ 1.2kV 118nC 129pF 3.357nF 3.6V 341W 43mΩ 63A 8pF TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
HT63N1200AKZ
Extended- Manufacturer
- MFR.Part #
- HT63N1200AKZ
- JLCPCB Part #
- C47326413
- Package
- TO-247-4L
- Description
- -40℃~+175℃ 1.2kV 118nC 129pF 3.357nF 3.6V 341W 43mΩ 63A 8pF TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HT63N1200AKZ Specifications
HT63N1200AKZ technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HTCSEMI | |
| Package | TO-247-4L | |
| Operating Temperature | -40℃~+175℃ | |
| Ciss-Input Capacitance | 3.357nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 118nC | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| Current - Continuous Drain(Id) | 63A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 129pF | |
| Pd - Power Dissipation | 341W | |
| RDS(on) | 43mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the HT63N1200AKZ. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
HT63N1200AKZ Documents
HT63N1200AKZ datasheets or manufacturer documentation.
HT63N1200AKZ Schematic Symbol & PCB Footprint
The HT63N1200AKZ schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.