HT39N650ADZ
- Manufacturer
- MFR.Part #
- HT39N650ADZ
- JLCPCB Part #
- C47326410
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.02nF 150W 3.6V 39A 46nC 650V 79mΩ 80pF 9pF N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HTCSEMI | |
| Package | TO-247-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.02nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 46nC | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| Current - Continuous Drain(Id) | 39A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 80pF | |
| Pd - Power Dissipation | 150W | |
| RDS(on) | 79mΩ |
* Images are for reference only
HT39N650ADZ
Extended- Manufacturer
- MFR.Part #
- HT39N650ADZ
- JLCPCB Part #
- C47326410
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.02nF 150W 3.6V 39A 46nC 650V 79mΩ 80pF 9pF N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
HT39N650ADZ
Extended- Manufacturer
- MFR.Part #
- HT39N650ADZ
- JLCPCB Part #
- C47326410
- Package
- TO-247-3
- Description
- -40℃~+175℃ 1.02nF 150W 3.6V 39A 46nC 650V 79mΩ 80pF 9pF N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
HT39N650ADZ Specifications
HT39N650ADZ technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HTCSEMI | |
| Package | TO-247-3 | |
| Operating Temperature | -40℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 1.02nF | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Gate Charge(Qg) | 46nC | |
| Reverse Transfer Capacitance (Crss) | 9pF | |
| Current - Continuous Drain(Id) | 39A | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 80pF | |
| Pd - Power Dissipation | 150W | |
| RDS(on) | 79mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the HT39N650ADZ. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
HT39N650ADZ Documents
HT39N650ADZ datasheets or manufacturer documentation.
HT39N650ADZ Schematic Symbol & PCB Footprint
The HT39N650ADZ schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.