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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMT65R033M2HXUMA1
IMT65R033M2HXUMA1
Extended
* Images are for reference only

IMT65R033M2HXUMA1

Attributes
Value
Manufacturer
Infineon Technologies
MFR.Part #
IMT65R033M2HXUMA1
JLCPCB Part #
C43311734
Package
HSOF-8
Description
-55℃~+175℃ 1 N-channel 1.215nF 117pF 312W 34nC 41mΩ 5.6V 650V 68A 7pF N-Channel HSOF-8 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageHSOF-8
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.215nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.6V
Gate Charge(Qg)34nC
Reverse Transfer Capacitance (Crss)7pF
Current - Continuous Drain(Id)68A
Drain to Source Voltage650V
Output Capacitance(Coss)117pF
Pd - Power Dissipation312W
RDS(on)41mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMT65R033M2HXUMA1
IMT65R033M2HXUMA1

* Images are for reference only

IMT65R033M2HXUMA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMT65R033M2HXUMA1
JLCPCB Part #
C43311734
Package
HSOF-8
Description
-55℃~+175℃ 1 N-channel 1.215nF 117pF 312W 34nC 41mΩ 5.6V 650V 68A 7pF N-Channel HSOF-8 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMT65R033M2HXUMA1

* Images are for reference only

IMT65R033M2HXUMA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMT65R033M2HXUMA1
JLCPCB Part #
C43311734
Package
HSOF-8
Description
-55℃~+175℃ 1 N-channel 1.215nF 117pF 312W 34nC 41mΩ 5.6V 650V 68A 7pF N-Channel HSOF-8 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMT65R033M2HXUMA1 Specifications

IMT65R033M2HXUMA1 technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageHSOF-8
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.215nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.6V
Gate Charge(Qg)34nC
Reverse Transfer Capacitance (Crss)7pF
Current - Continuous Drain(Id)68A
Drain to Source Voltage650V
Output Capacitance(Coss)117pF
Pd - Power Dissipation312W
RDS(on)41mΩ
Results remaining: 0

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IMT65R033M2HXUMA1 Schematic Symbol & PCB Footprint

The IMT65R033M2HXUMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.