


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | SOT-223 | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Ciss) | 231pF@100V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V@100uA | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Current - Continuous Drain(Id) | 6.6A | |
| Drain to Source Voltage | 500V | |
| Pd - Power Dissipation | 5W | |
| RDS(on) | 950mΩ@1.2A,13V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IPN50R950CEATMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/MOSFETs | |
| Manufacturer | Infineon Technologies | |
| Package | SOT-223 | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Ciss) | 231pF@100V | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V@100uA | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Current - Continuous Drain(Id) | 6.6A | |
| Drain to Source Voltage | 500V | |
| Pd - Power Dissipation | 5W | |
| RDS(on) | 950mΩ@1.2A,13V |
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IPN50R950CEATMA1 datasheets or manufacturer documentation.
The IPN50R950CEATMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.