
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,50A | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Current - Collector(Ic) | 50A | |
| Pd - Power Dissipation | 175W | |
| IGBT Type | FS (Field Stop) | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
F3L50R06W1E3B11BOMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,50A | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Current - Collector(Ic) | 50A | |
| Pd - Power Dissipation | 175W | |
| IGBT Type | FS (Field Stop) | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
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The F3L50R06W1E3B11BOMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.