AIGB30N65F5ATMA1
- Manufacturer
- MFR.Part #
- AIGB30N65F5ATMA1
- JLCPCB Part #
- C3191790
- Package
- TO-263
- Description
- -40℃~+175℃ 1.8nF 100uJ 11pF 188W 188ns 2.1V@30A,15V 25ns 3.2V@0.3mA 30A 330uJ 50pF 650V 70nC@15V TO-263 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 1.8nF | |
| Td(off) | 188ns | |
| Gate Charge(Qg) | 70nC@15V | |
| Switching Energy(Eoff) | 100uJ | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| Turn-On Energy (Eon) | 330uJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Current - Collector(Ic) | 30A | |
| Vce Saturation(VCE(sat)) | 2.1V@30A,15V | |
| Pd - Power Dissipation | 188W | |
| Output Capacitance(Coes) | 50pF | |
| Td(on) | 25ns |
* Images are for reference only
AIGB30N65F5ATMA1
Extended- Manufacturer
- MFR.Part #
- AIGB30N65F5ATMA1
- JLCPCB Part #
- C3191790
- Package
- TO-263
- Description
- -40℃~+175℃ 1.8nF 100uJ 11pF 188W 188ns 2.1V@30A,15V 25ns 3.2V@0.3mA 30A 330uJ 50pF 650V 70nC@15V TO-263 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
AIGB30N65F5ATMA1
Extended- Manufacturer
- MFR.Part #
- AIGB30N65F5ATMA1
- JLCPCB Part #
- C3191790
- Package
- TO-263
- Description
- -40℃~+175℃ 1.8nF 100uJ 11pF 188W 188ns 2.1V@30A,15V 25ns 3.2V@0.3mA 30A 330uJ 50pF 650V 70nC@15V TO-263 IGBT Transistors / Modules ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AIGB30N65F5ATMA1 Specifications
AIGB30N65F5ATMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.3mA | |
| Operating Temperature | -40℃~+175℃ | |
| Input Capacitance(Cies) | 1.8nF | |
| Td(off) | 188ns | |
| Gate Charge(Qg) | 70nC@15V | |
| Switching Energy(Eoff) | 100uJ | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| Turn-On Energy (Eon) | 330uJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Current - Collector(Ic) | 30A | |
| Vce Saturation(VCE(sat)) | 2.1V@30A,15V | |
| Pd - Power Dissipation | 188W | |
| Output Capacitance(Coes) | 50pF | |
| Td(on) | 25ns |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the AIGB30N65F5ATMA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
AIGB30N65F5ATMA1 Schematic Symbol & PCB Footprint
The AIGB30N65F5ATMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.