
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.6V@15V,2A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 260ns | |
| Gate Charge(Qg) | 11nC | |
| Current - Collector(Ic) | 6.2A | |
| Pd - Power Dissipation | 62W | |
| IGBT Type | NPT (Non-Punch Through) | |
| Turn-On Energy (Eon) | 220uJ | |
| Td(on) | 23ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SGD02N120BUMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.6V@15V,2A | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Td(off) | 260ns | |
| Gate Charge(Qg) | 11nC | |
| Current - Collector(Ic) | 6.2A | |
| Pd - Power Dissipation | 62W | |
| IGBT Type | NPT (Non-Punch Through) | |
| Turn-On Energy (Eon) | 220uJ | |
| Td(on) | 23ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
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SGD02N120BUMA1 datasheets or manufacturer documentation.
The SGD02N120BUMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.