


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 5nF | |
| Td(off) | 261ns | |
| Gate Charge(Qg) | 199nC | |
| Switching Energy(Eoff) | 660uJ | |
| Pulsed Current- Forward(Ifm) | 150A | |
| Reverse Transfer Capacitance (Cres) | 18pF | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 108ns | |
| Current - Collector(Ic) | 100A | |
| Vce Saturation(VCE(sat)) | 1.6V@50A,15V | |
| Pd - Power Dissipation | 251W | |
| Output Capacitance(Coes) | 49pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 21ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IHW50N65R6XKSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.5mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 5nF | |
| Td(off) | 261ns | |
| Gate Charge(Qg) | 199nC | |
| Switching Energy(Eoff) | 660uJ | |
| Pulsed Current- Forward(Ifm) | 150A | |
| Reverse Transfer Capacitance (Cres) | 18pF | |
| Turn-On Energy (Eon) | 1.5mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 108ns | |
| Current - Collector(Ic) | 100A | |
| Vce Saturation(VCE(sat)) | 1.6V@50A,15V | |
| Pd - Power Dissipation | 251W | |
| Output Capacitance(Coes) | 49pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 21ns |
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The IHW50N65R6XKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.