
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Input Capacitance(Cies) | 26nF | |
| Td(off) | 550ns | |
| Reverse Transfer Capacitance (Cres) | 2nF | |
| Current - Collector Pulsed (Icm) | 1100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Recovery Time(trr) | 600ns | |
| Current - Collector(Ic) | 550A | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Pd - Power Dissipation | 2.7kW | |
| Output Capacitance(Coes) | 4nF | |
| Td(on) | 100ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
BSM400GA120DN2 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V | |
| Input Capacitance(Cies) | 26nF | |
| Td(off) | 550ns | |
| Reverse Transfer Capacitance (Cres) | 2nF | |
| Current - Collector Pulsed (Icm) | 1100A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Recovery Time(trr) | 600ns | |
| Current - Collector(Ic) | 550A | |
| Vce Saturation(VCE(sat)) | 2.5V | |
| Pd - Power Dissipation | 2.7kW | |
| Output Capacitance(Coes) | 4nF | |
| Td(on) | 100ns |
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BSM400GA120DN2 datasheets or manufacturer documentation.
Datasheet: BSM400GA120DN2 Datasheet (PDF)
The BSM400GA120DN2 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.