IMW120R220M1HXKSA1
- Manufacturer
- MFR.Part #
- IMW120R220M1HXKSA1
- JLCPCB Part #
- C2997930
- Package
- TO-247-3
- Description
- -55℃~+175℃ 1.2kV 13A 16pF 220mΩ 289pF 5.7V 75W 8.5nC N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 289pF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 8.5nC | |
| Current - Continuous Drain(Id) | 13A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 220mΩ |
* Images are for reference only
IMW120R220M1HXKSA1
Extended- Manufacturer
- MFR.Part #
- IMW120R220M1HXKSA1
- JLCPCB Part #
- C2997930
- Package
- TO-247-3
- Description
- -55℃~+175℃ 1.2kV 13A 16pF 220mΩ 289pF 5.7V 75W 8.5nC N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
IMW120R220M1HXKSA1
Extended- Manufacturer
- MFR.Part #
- IMW120R220M1HXKSA1
- JLCPCB Part #
- C2997930
- Package
- TO-247-3
- Description
- -55℃~+175℃ 1.2kV 13A 16pF 220mΩ 289pF 5.7V 75W 8.5nC N-Channel TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IMW120R220M1HXKSA1 Specifications
IMW120R220M1HXKSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 289pF | |
| Gate Threshold Voltage (Vgs(th)) | 5.7V | |
| Gate Charge(Qg) | 8.5nC | |
| Current - Continuous Drain(Id) | 13A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 16pF | |
| Pd - Power Dissipation | 75W | |
| RDS(on) | 220mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the IMW120R220M1HXKSA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
IMW120R220M1HXKSA1 Documents
IMW120R220M1HXKSA1 datasheets or manufacturer documentation.
Datasheet: IMW120R220M1HXKSA1 Datasheet (PDF)
IMW120R220M1HXKSA1 Schematic Symbol & PCB Footprint
The IMW120R220M1HXKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.