


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 2.667nF | |
| Gate Charge(Qg) | 82nC | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| Current - Continuous Drain(Id) | 100A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 429W | |
| RDS(on) | 25mΩ |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AIMZH120R020M1TXKSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-4 | |
| Operating Temperature | -55℃~+175℃ | |
| Ciss-Input Capacitance | 2.667nF | |
| Gate Charge(Qg) | 82nC | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| Current - Continuous Drain(Id) | 100A | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 126pF | |
| Pd - Power Dissipation | 429W | |
| RDS(on) | 25mΩ |
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The AIMZH120R020M1TXKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.