AIMBG120R010M1XTMA1
- Manufacturer
- MFR.Part #
- AIMBG120R010M1XTMA1
- JLCPCB Part #
- C20189644
- Package
- TO-263-7-12
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 11.3mΩ 16pF 178nC 205A 268pF 5.1V 5.703nF 882W N-Channel TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263-7-12 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.703nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Gate Charge(Qg) | 178nC | |
| Current - Continuous Drain(Id) | 205A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 882W | |
| Output Capacitance(Coss) | 268pF | |
| RDS(on) | 11.3mΩ |
* Images are for reference only
AIMBG120R010M1XTMA1
Extended- Manufacturer
- MFR.Part #
- AIMBG120R010M1XTMA1
- JLCPCB Part #
- C20189644
- Package
- TO-263-7-12
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 11.3mΩ 16pF 178nC 205A 268pF 5.1V 5.703nF 882W N-Channel TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
AIMBG120R010M1XTMA1
Extended- Manufacturer
- MFR.Part #
- AIMBG120R010M1XTMA1
- JLCPCB Part #
- C20189644
- Package
- TO-263-7-12
- Description
- -55℃~+175℃ 1 N-channel 1.2kV 11.3mΩ 16pF 178nC 205A 268pF 5.1V 5.703nF 882W N-Channel TO-263-7-12 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- EAR99
- Datasheet
- Source
- JLCPCB
- Assembly Type
- SMT Assembly
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 1
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AIMBG120R010M1XTMA1 Specifications
AIMBG120R010M1XTMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | Infineon Technologies | |
| Package | TO-263-7-12 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 5.703nF | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 5.1V | |
| Gate Charge(Qg) | 178nC | |
| Current - Continuous Drain(Id) | 205A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| Drain to Source Voltage | 1.2kV | |
| Pd - Power Dissipation | 882W | |
| Output Capacitance(Coss) | 268pF | |
| RDS(on) | 11.3mΩ |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the AIMBG120R010M1XTMA1. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
AIMBG120R010M1XTMA1 Schematic Symbol & PCB Footprint
The AIMBG120R010M1XTMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.