
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3-41 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Td(off) | 165ns | |
| Gate Charge(Qg) | 95nC | |
| Current - Collector(Ic) | 74A | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 19ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
AIGW40N65H5XKSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3-41 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Td(off) | 165ns | |
| Gate Charge(Qg) | 95nC | |
| Current - Collector(Ic) | 74A | |
| Pd - Power Dissipation | 250W | |
| Td(on) | 19ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
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AIGW40N65H5XKSA1 datasheets or manufacturer documentation.
The AIGW40N65H5XKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.