
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252-3 | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Reverse Recovery Time(trr) | 34ns | |
| Td(off) | 116ns | |
| Gate Charge(Qg) | 27nC | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| Td(on) | 12ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IKD04N60RFAATMA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-252-3 | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Reverse Recovery Time(trr) | 34ns | |
| Td(off) | 116ns | |
| Gate Charge(Qg) | 27nC | |
| Current - Collector(Ic) | 8A | |
| Pd - Power Dissipation | 75W | |
| Td(on) | 12ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
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IKD04N60RFAATMA1 datasheets or manufacturer documentation.
Datasheet: IKD04N60RFAATMA1 Datasheet (PDF)
The IKD04N60RFAATMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.