


Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.75mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 4.46nF | |
| Td(off) | 310ns | |
| Switching Energy(Eoff) | 1.23mJ | |
| Gate Charge(Qg) | 435nC | |
| Pulsed Current- Forward(Ifm) | 225A | |
| Reverse Transfer Capacitance (Cres) | 46pF | |
| Turn-On Energy (Eon) | 2.17mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 100ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 1.65V@75A,15V | |
| Pd - Power Dissipation | 333W | |
| Output Capacitance(Coes) | 135pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 28ns |

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

* Images are for reference only
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
IKW75N65ET7XKSA1 technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Transistors/Thyristors/IGBT Transistors / Modules | |
| Manufacturer | Infineon Technologies | |
| Package | TO-247-3 | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@0.75mA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Input Capacitance(Cies) | 4.46nF | |
| Td(off) | 310ns | |
| Switching Energy(Eoff) | 1.23mJ | |
| Gate Charge(Qg) | 435nC | |
| Pulsed Current- Forward(Ifm) | 225A | |
| Reverse Transfer Capacitance (Cres) | 46pF | |
| Turn-On Energy (Eon) | 2.17mJ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Recovery Time(trr) | 100ns | |
| Current - Collector(Ic) | 80A | |
| Vce Saturation(VCE(sat)) | 1.65V@75A,15V | |
| Pd - Power Dissipation | 333W | |
| Output Capacitance(Coes) | 135pF | |
| IGBT Type | FS (Field Stop) | |
| Td(on) | 28ns |
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The IKW75N65ET7XKSA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.