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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMBG40R036M2HXTMA1
IMBG40R036M2HXTMA1 - 1
IMBG40R036M2HXTMA1 - 2
IMBG40R036M2HXTMA1 - 3
Extended1/3
* Images are for reference only
IMBG40R036M2HXTMA1
Attributes
Value
Manufacturer
Infineon Technologies
MFR.Part #
IMBG40R036M2HXTMA1
JLCPCB Part #
C34894218
Package
TO-263-7
Description
-55℃~+175℃ 1 N-channel 1.17nF 10pF 120pF 167W 26nC 400V 45.7mΩ 5.6V 50A N-Channel TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageTO-263-7
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.17nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.6V
Gate Charge(Qg)26nC
Reverse Transfer Capacitance (Crss)10pF
Current - Continuous Drain(Id)50A
Drain to Source Voltage400V
Output Capacitance(Coss)120pF
Pd - Power Dissipation167W
RDS(on)45.7mΩ
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. IMBG40R036M2HXTMA1
IMBG40R036M2HXTMA1

* Images are for reference only

IMBG40R036M2HXTMA1

Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMBG40R036M2HXTMA1
JLCPCB Part #
C34894218
Package
TO-263-7
Description
-55℃~+175℃ 1 N-channel 1.17nF 10pF 120pF 167W 26nC 400V 45.7mΩ 5.6V 50A N-Channel TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMBG40R036M2HXTMA1

* Images are for reference only

IMBG40R036M2HXTMA1
Extended
Manufacturer

Infineon Technologies

MFR.Part #
IMBG40R036M2HXTMA1
JLCPCB Part #
C34894218
Package
TO-263-7
Description
-55℃~+175℃ 1 N-channel 1.17nF 10pF 120pF 167W 26nC 400V 45.7mΩ 5.6V 50A N-Channel TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
EAR99
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 1

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

IMBG40R036M2HXTMA1 Specifications

IMBG40R036M2HXTMA1 technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerInfineon Technologies
PackageTO-263-7
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance1.17nF
Number1 N-channel
Gate Threshold Voltage (Vgs(th))5.6V
Gate Charge(Qg)26nC
Reverse Transfer Capacitance (Crss)10pF
Current - Continuous Drain(Id)50A
Drain to Source Voltage400V
Output Capacitance(Coss)120pF
Pd - Power Dissipation167W
RDS(on)45.7mΩ
Results remaining: 0

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IMBG40R036M2HXTMA1 Schematic Symbol & PCB Footprint

The IMBG40R036M2HXTMA1 schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.