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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. STP32N65M5-HXY
STP32N65M5-HXY
Extended
* Images are for reference only
STP32N65M5-HXY
Attributes
Value
Manufacturer
HXY MOSFET
MFR.Part #
STP32N65M5-HXY
JLCPCB Part #
C53133991
Package
TO-220C
Description
-55℃~+175℃ 125W 2.7V 30A 35.8nC 55pF 767pF 7pF TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-220C
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance767pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.7V
Gate Charge(Qg)35.8nC
Reverse Transfer Capacitance (Crss)7pF
Current - Continuous Drain(Id)30A
Drain to Source Voltage650V
Output Capacitance(Coss)55pF
Pd - Power Dissipation125W
RDS(on)94mΩ@20V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. STP32N65M5-HXY
STP32N65M5-HXY

* Images are for reference only

STP32N65M5-HXY

Extended
Manufacturer

HXY MOSFET

MFR.Part #
STP32N65M5-HXY
JLCPCB Part #
C53133991
Package
TO-220C
Description
-55℃~+175℃ 125W 2.7V 30A 35.8nC 55pF 767pF 7pF TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

STP32N65M5-HXY

* Images are for reference only

STP32N65M5-HXY
Extended
Manufacturer

HXY MOSFET

MFR.Part #
STP32N65M5-HXY
JLCPCB Part #
C53133991
Package
TO-220C
Description
-55℃~+175℃ 125W 2.7V 30A 35.8nC 55pF 767pF 7pF TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

STP32N65M5-HXY Specifications

STP32N65M5-HXY technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-220C
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance767pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.7V
Gate Charge(Qg)35.8nC
Reverse Transfer Capacitance (Crss)7pF
Current - Continuous Drain(Id)30A
Drain to Source Voltage650V
Output Capacitance(Coss)55pF
Pd - Power Dissipation125W
RDS(on)94mΩ@20V
Results remaining: 0

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STP32N65M5-HXY Schematic Symbol & PCB Footprint

The STP32N65M5-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.