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  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. STP16N65M5-HXY
STP16N65M5-HXY - 1
STP16N65M5-HXY - 2
STP16N65M5-HXY - 3
Extended1/3
* Images are for reference only
STP16N65M5-HXY
Attributes
Value
Manufacturer
HXY MOSFET
MFR.Part #
STP16N65M5-HXY
JLCPCB Part #
C53134061
Package
TO-220C
Description
-55℃~+175℃ 1 N-channel 11.6nC 184pF 2.7V 22pF 3.2pF 300mΩ@18V 32W 650V 9A N-Channel Standalone TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-220C
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance184pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.7V
Gate Charge(Qg)11.6nC
Reverse Transfer Capacitance (Crss)3.2pF
Current - Continuous Drain(Id)9A
Drain to Source Voltage650V
Output Capacitance(Coss)22pF
Pd - Power Dissipation32W
RDS(on)300mΩ@18V
Results remaining: 0

  1. JLCPCB
  2. Parts Library
  3. All Components
  4. Silicon Carbide (SiC) Devices
  5. Silicon Carbide Field Effect Transistor (MOSFET)
  6. STP16N65M5-HXY
STP16N65M5-HXY

* Images are for reference only

STP16N65M5-HXY

Extended
Manufacturer

HXY MOSFET

MFR.Part #
STP16N65M5-HXY
JLCPCB Part #
C53134061
Package
TO-220C
Description
-55℃~+175℃ 1 N-channel 11.6nC 184pF 2.7V 22pF 3.2pF 300mΩ@18V 32W 650V 9A N-Channel Standalone TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

STP16N65M5-HXY

* Images are for reference only

STP16N65M5-HXY
Extended
Manufacturer

HXY MOSFET

MFR.Part #
STP16N65M5-HXY
JLCPCB Part #
C53134061
Package
TO-220C
Description
-55℃~+175℃ 1 N-channel 11.6nC 184pF 2.7V 22pF 3.2pF 300mΩ@18V 32W 650V 9A N-Channel Standalone TO-220C Silicon Carbide Field Effect Transistor (MOSFET) ROHS
EasyEDA Libraries
ECCN
-
Datasheet
Download
Source
JLCPCB
Assembly Type
Wave Soldering
PCBA Type
Economic and Standard
MSL Level
MSL 3

Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.

STP16N65M5-HXY Specifications

STP16N65M5-HXY technical specifications, attributes, and parameters.

AttributesValue
CategorySilicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET)
ManufacturerHXY MOSFET
PackageTO-220C
Operating Temperature-55℃~+175℃
TypeN-Channel
Ciss-Input Capacitance184pF
ConfigurationStandalone
Number1 N-channel
Gate Threshold Voltage (Vgs(th))2.7V
Gate Charge(Qg)11.6nC
Reverse Transfer Capacitance (Crss)3.2pF
Current - Continuous Drain(Id)9A
Drain to Source Voltage650V
Output Capacitance(Coss)22pF
Pd - Power Dissipation32W
RDS(on)300mΩ@18V
Results remaining: 0

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  • 1

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  • 2

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STP16N65M5-HXY Schematic Symbol & PCB Footprint

The STP16N65M5-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.