- Manufacturer
- MFR.Part #
- SIHG21N65EF-GE3-HXY
- JLCPCB Part #
- C53134045
- Package
- TO-247
- Description
- -55℃~+175℃ 17.6nC 240mΩ 25A 3.5pF 34pF 361pF 3V 83W TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HXY MOSFET | |
| Package | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 361pF | |
| Configuration | Standalone | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 17.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| Current - Continuous Drain(Id) | 25A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 165mΩ@18V |
* Images are for reference only
SIHG21N65EF-GE3-HXY
Extended- Manufacturer
- MFR.Part #
- SIHG21N65EF-GE3-HXY
- JLCPCB Part #
- C53134045
- Package
- TO-247
- Description
- -55℃~+175℃ 17.6nC 240mΩ 25A 3.5pF 34pF 361pF 3V 83W TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
* Images are for reference only
- Manufacturer
- MFR.Part #
- SIHG21N65EF-GE3-HXY
- JLCPCB Part #
- C53134045
- Package
- TO-247
- Description
- -55℃~+175℃ 17.6nC 240mΩ 25A 3.5pF 34pF 361pF 3V 83W TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- EasyEDA Libraries
- ECCN
- -
- Source
- JLCPCB
- Assembly Type
- Wave Soldering
- PCBA Type
- Economic and Standard
- MSL Level
- MSL 3
Note: The purchased components are stored in your JLCPCB parts library for future PCBA orders only, and cannot be shipped separately.
SIHG21N65EF-GE3-HXY Specifications
SIHG21N65EF-GE3-HXY technical specifications, attributes, and parameters.
| Attributes | Value | |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices/Silicon Carbide Field Effect Transistor (MOSFET) | |
| Manufacturer | HXY MOSFET | |
| Package | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Type | N-Channel | |
| Ciss-Input Capacitance | 361pF | |
| Configuration | Standalone | |
| Number | 1 N-channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Gate Charge(Qg) | 17.6nC | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| Current - Continuous Drain(Id) | 25A | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Pd - Power Dissipation | 83W | |
| RDS(on) | 165mΩ@18V |
PCB Assembly Tips
From components to fully assembled PCBs. JLCPCB supports PCB assembly for the SIHG21N65EF-GE3-HXY. Sign up to receive and start your assembly today →
- 1
Step 1 - Pre-order the parts you need from JLCPCB.
- 2
Step 2 - Place a PCBA order to have those parts assembled onto your boards.
- 3
Step 3 - JLCPCB manufactures and assembles your boards in as fast as 3 days.
SIHG21N65EF-GE3-HXY Schematic Symbol & PCB Footprint
The SIHG21N65EF-GE3-HXY schematic symbol and PCB footprint are available in the EasyEDA PCB design tool.