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  • Digital Transistors

    (240)
  • Manufacturer
    • Diodes Incorporated
    • Infineon Technologies
    • LRC
    • MCC(Micro Commercial Components)
    • Nexperia
    • onsemi
    • powersilicon
    • ROHM Semicon
  • PackageType
    • DFN-3(1x0.6)
    • DFN1010-3
    • DFN1010-6
    • DFN1010D-3
    • DFN1412-6
    • SC-59
    • SC-70
    • SC-70-3
    • SC-70-6(SOT-363)
    • SC-74
    • SC-88-6
    • SOT-23
    • SOT-23-3
    • SOT-23-3L
    • SOT-323-3
    • SOT-363
    • SOT-457
    • SOT-553-5
    • SOT-563
    • SOT-666
  • Collector Current (Ic)
    • 20mA
    • 30mA
    • 100mA
    • 500mA
    • 600mA
    • 1A
    • 1.5A
    • 1.8A
  • Collector Cut-Off Current (Icbo)
    • 100nA
    • 500nA
    • 1uA
  • Collector-Emitter Breakdown Voltage (Vceo)
    • 20V
    • 40V
    • 50V
    • 60V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
    • 100mV@0.25mA,5mA
    • 100mV@10mA,0.5mA
    • 100mV@10mA,500uA
    • 100mV@2.5mA,50mA
    • 100mV@50mA,2.5mA
    • 100mV@5mA,0.25mA
    • 100mV@5mA,250uA
    • 150mV@10mA,0.5mA
    • 150mV@10mA,500uA
    • 150mV@30mA,1.5mA
    • 150mV@500uA,5mA
    • 150mV@5mA,0.25mA
    • 150mV@5mA,250uA
    • 250mV@300uA,10mA
    • 0.3V@50mA,2.5mA
    • 300mV@250uA,5mA
  • DC Current Gain (hFE@Ic,Vce)
    • 100@10mA,5V
    • 100@1mA,5V
    • 100@5mA,5V
    • 200@1mA,5V
    • 30@10mA,5V
    • 30@20mA,5V
    • 30@40mA,5V
    • 30@5mA,5V
    • 330@1mA,5V
    • 33@50mA,5V
    • 33@5mA,5V
    • 35@5mA,10V
    • 35@5mA,5V
    • 40@50mA,5V
    • 40@5mA,5V
    • 50@10mA,5V
    • 56@50mA,5V
    • 60@50mA,5V
    • 60@5mA,5V
    • 70@50mA,5V
  • Input Resistor
    • 1kΩ
    • 2.2kΩ
    • 4.7kΩ
    • 10kΩ
    • 22kΩ
    • 47kΩ
    • 100kΩ
  • Input Voltage (VI(off)@Ic,Vce)
    • 0.3V@100uA,5V
    • 500mV@100uA,5V
    • 0.6V@100uA,5V
    • 0.65V@100uA,5V
    • 0.7V@100uA,5V
    • 0.75V@100uA,5V
    • 0.8V@100uA,5V
    • 0.9V@100uA,5V
    • 1V@100uA,5V
    • 1.05V@100uA,5V
    • 1.1V@100uA,5V
    • 1.2V@100uA,5V
    • 1.2V@1mA,5V
    • 1.7V@100uA,5V
  • Input Voltage (VI(on)@Ic,Vce)
    • 0.75V@5mA,0.3V
    • 0.8V@1mA,0.3V
    • 0.8V@20mA,0.3V
    • 0.9V@5mA,0.3V
    • 1V@20mA,0.3V
    • 1.1V@2mA,0.3V
    • 1.25V@20mA,0.3V
    • 1.4V@20mA,0.3V
    • 1.45V@20mA,500mA
    • 1.5V@1mA,0.3V
    • 1.5V@20mA,0.3V
    • 1.6V@1mA,0.3V
    • 1.6V@20mA,0.3V
    • 1.6V@2mA,0.3V
    • 1.7V@5mA,0.3V
    • 1.8V@10mA,0.3V
    • 1.9V@20mA,0.3V
    • 2V@20mA,300mV
    • 2.2V@20mA,0.3V
    • 2.7V@2mA,0.3V
  • Operating Temperature
    • +150℃@(Tj)
    • +175℃@(Tj)
    • +210℃@(Tj)
  • Output Voltage (VO(on)@Io/Ii)
    • 0.3V@10mA,0.5mA
    • 300mV@10mA,500uA
  • Power Dissipation (Pd)
    • 180mW
    • 200mW
    • 246mW
    • 250mW
    • 300mW
    • 320mW
    • 325mW
    • 350mW
    • 400mW
    • 420mW
    • 425mW
    • 460mW
    • 480mW
    • 940mW
  • Resistor Ratio
    • 0.47
    • 2.1
    • 2.13
    • 4.5
    • 4.55
    • 4.7
    • 1
    • 10
    • 21
  • Transistor Type
    • 1 NPN - Pre Biased
    • 1 NPN - Pre-Biased,1 PNP - Pre-Biased
    • 2 NPN - Pre-Biased
    • 2 PNP - Pre-Biased
    • One PNP - Pre-Biased
    • PNP-预偏置
  • Transition Frequency (fT)
    • 100MHz
    • 140MHz
    • 150MHz
    • 180MHz
    • 210MHz
    • 225MHz
    • 230MHz
    • 250MHz
Results remaining: 240
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240 items in total
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